>>>>>型號(hào):5SHY4045L0001 集成柵極換流晶閘管IGCT 大功率開(kāi)關(guān)器件

【功能描述】

5SHY4045L0001 3BHB018162R0001集成柵極換流晶閘管IGCT(Intergrated Gate Commutated Thyristors)是1996年問(wèn)世的用于巨型電力電子成套裝置中的新型電力半導(dǎo)體器件。IGCT是一種基于GTO結(jié)構(gòu)、利用集成柵極結(jié)構(gòu)進(jìn)行柵極硬驅(qū)動(dòng)、采用緩沖層結(jié)構(gòu)及陽(yáng)極透明發(fā)射極技術(shù)的新型大功率半導(dǎo)體開(kāi)關(guān)器件，具有晶閘管的通態(tài)特性及晶體管的開(kāi)關(guān)特性。5SHY4045L0001 3BHB018162R0001由于采用了緩沖結(jié)構(gòu)以及淺層發(fā)射極技術(shù)，因而使動(dòng)態(tài)損耗降低了約50％，另外，此類(lèi)器件還在一個(gè)芯片上集成了具有良好動(dòng)態(tài)特性的續(xù)流二極管，從而以其獨(dú)特的方式實(shí)現(xiàn)了晶閘管的低通態(tài)壓降、高阻斷電壓和晶體管穩(wěn)定的開(kāi)關(guān)特性有機(jī)結(jié)合.

5SHY4045L0001 IGCT系列模塊是一款高性能、大功率的半導(dǎo)體開(kāi)關(guān)，專(zhuān)為工業(yè)應(yīng)用而設(shè)計(jì)。它采用先進(jìn)的硬驅(qū)動(dòng)GTO（門(mén)極可關(guān)斷晶閘管）技術(shù)，具有低功耗、高可靠性和易于集成的特點(diǎn)。

IGCT（集成門(mén)極整流晶閘管）是一種大功率開(kāi)關(guān)器件，能夠承受高電壓和大電流。它廣泛應(yīng)用于各種工業(yè)領(lǐng)域，如電力、牽引、風(fēng)電、太陽(yáng)能等，作為開(kāi)關(guān)和控制系統(tǒng)中的關(guān)鍵元件。

5SHY4045L0001 IGCT系列模塊具有緊湊的結(jié)構(gòu)和優(yōu)異的電氣性能，能夠滿(mǎn)足各種不同的應(yīng)用需求。它采用改進(jìn)的緩沖層和透明陽(yáng)極設(shè)計(jì)，進(jìn)一步降低了轉(zhuǎn)換器的損耗和成本。此外，該模塊還具有同質(zhì)操作的特點(diǎn)，能夠減少或消除dv/dt緩沖器，進(jìn)一步提高系統(tǒng)的可靠性和穩(wěn)定性。

總之，5SHY4045L0001 IGCT系列模塊是一款適用于工業(yè)應(yīng)用的半導(dǎo)體開(kāi)關(guān)器件。它具有低功耗、高可靠性、易于集成和優(yōu)異的電氣性能等特點(diǎn)，能夠?yàn)楣I(yè)自動(dòng)化設(shè)備提供可靠的開(kāi)關(guān)解決方案。

 >>>>>型號(hào):5SHY4045L0001 集成柵極換流晶閘管IGCT 大功率開(kāi)關(guān)器件

【英文介紹】

5SHY4045L0001 3BHB018162R0001 Intergrated Gate Commutated Thyristors (IGCT) is a new type of power semiconductor device used in large power electronics sets introduced in 1996. IGCT is a new type of high-power semiconductor switching device based on GTO structure, using integrated gate structure to drive the gate hard, using buffer layer structure and transparent anode emitter technology, which has the on-state characteristics of thyristor and the switching characteristics of transistor. 5SHY4045L0001 3BHB018162R0001 reduces the dynamic loss by about 50% due to the buffer structure and shallow emitter technology. In addition, such devices also integrate a continuous current diode with good dynamic characteristics on a chip. Thus, the combination of low on-state voltage drop, high blocking voltage and stable transistor switching characteristics is realized in its unique way.

The 5SHY4045L0001 IGCT series module is a high-performance, high-power semiconductor switch designed for industrial applications. It uses advanced hard drive GTO (gate turn-off thyristor) technology with low power consumption, high reliability and easy integration.

IGCT (Integrated Gate Rectifier thyristor) is a kind of high-power switching device, which can withstand high voltage and high current. It is widely used in various industrial fields, such as power, traction, wind power, solar energy, etc., as a key component in switching and control systems.

The 5SHY4045L0001 IGCT series module has a compact structure and excellent electrical performance to meet the needs of a variety of different applications. It uses an improved buffer layer and transparent anode design to further reduce the loss and cost of the converter. In addition, the module also has the characteristics of homogeneous operation, which can reduce or eliminate the dv/dt buffer, further improve the reliability and stability of the system.

In summary, the 5SHY4045L0001 IGCT series module is a semiconductor switching device suitable for industrial applications. It has the characteristics of low power consumption, high reliability, easy integration and excellent electrical performance, which can provide a reliable switching solution for industrial automation equipment.

 >>>>>型號(hào):5SHY4045L0001 集成柵極換流晶閘管IGCT 大功率開(kāi)關(guān)器件